MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To improve yield by coating sections except an electrode formed on a wafer with a passivation film, depositing an under-bump metal on the whole surface of the wafer, fixing the wafer onto a projection exposure device and transferring patterns on the wafer. CONSTITUTION:Sections except alumin...

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description PURPOSE:To improve yield by coating sections except an electrode formed on a wafer with a passivation film, depositing an under-bump metal on the whole surface of the wafer, fixing the wafer onto a projection exposure device and transferring patterns on the wafer. CONSTITUTION:Sections except aluminum electrodes 12 formed to a large number of chips formed onto a wafer 11 are coated with a passivation film 13, and an UBM (an under-bump metal) 14 is deposited on the whole surface of the wafer 11. The wafer 11 is fixed by a disc 17, to which a pawl 18 is shaped. The wafer 11 is irradiated with light having only the patterns of bumps from a projection section 20, and the bump patterns are transferred to a resist while patterns light-shielded by the pawl 18 are transferred. The resists on the electrodes 12 are removed through developing and etching while the UBM 14, from which the resists of sections light-shielded by the pawl 18 are removed, is exposed, thus forming a contact hole for plating.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH0464237A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH0464237A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH0464237A3</originalsourceid><addsrcrecordid>eNrjZFD2dfQLdXN0DgkNclXwd1MIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GJmYmRsbmjsZEKAEAJxUinQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>MIYAZAKI KAZUMI</creator><creatorcontrib>MIYAZAKI KAZUMI</creatorcontrib><description>PURPOSE:To improve yield by coating sections except an electrode formed on a wafer with a passivation film, depositing an under-bump metal on the whole surface of the wafer, fixing the wafer onto a projection exposure device and transferring patterns on the wafer. CONSTITUTION:Sections except aluminum electrodes 12 formed to a large number of chips formed onto a wafer 11 are coated with a passivation film 13, and an UBM (an under-bump metal) 14 is deposited on the whole surface of the wafer 11. The wafer 11 is fixed by a disc 17, to which a pawl 18 is shaped. The wafer 11 is irradiated with light having only the patterns of bumps from a projection section 20, and the bump patterns are transferred to a resist while patterns light-shielded by the pawl 18 are transferred. The resists on the electrodes 12 are removed through developing and etching while the UBM 14, from which the resists of sections light-shielded by the pawl 18 are removed, is exposed, thus forming a contact hole for plating.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1992</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19920228&amp;DB=EPODOC&amp;CC=JP&amp;NR=H0464237A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19920228&amp;DB=EPODOC&amp;CC=JP&amp;NR=H0464237A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIYAZAKI KAZUMI</creatorcontrib><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><description>PURPOSE:To improve yield by coating sections except an electrode formed on a wafer with a passivation film, depositing an under-bump metal on the whole surface of the wafer, fixing the wafer onto a projection exposure device and transferring patterns on the wafer. CONSTITUTION:Sections except aluminum electrodes 12 formed to a large number of chips formed onto a wafer 11 are coated with a passivation film 13, and an UBM (an under-bump metal) 14 is deposited on the whole surface of the wafer 11. The wafer 11 is fixed by a disc 17, to which a pawl 18 is shaped. The wafer 11 is irradiated with light having only the patterns of bumps from a projection section 20, and the bump patterns are transferred to a resist while patterns light-shielded by the pawl 18 are transferred. The resists on the electrodes 12 are removed through developing and etching while the UBM 14, from which the resists of sections light-shielded by the pawl 18 are removed, is exposed, thus forming a contact hole for plating.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1992</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD2dfQLdXN0DgkNclXwd1MIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GJmYmRsbmjsZEKAEAJxUinQ</recordid><startdate>19920228</startdate><enddate>19920228</enddate><creator>MIYAZAKI KAZUMI</creator><scope>EVB</scope></search><sort><creationdate>19920228</creationdate><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><author>MIYAZAKI KAZUMI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0464237A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1992</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MIYAZAKI KAZUMI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIYAZAKI KAZUMI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><date>1992-02-28</date><risdate>1992</risdate><abstract>PURPOSE:To improve yield by coating sections except an electrode formed on a wafer with a passivation film, depositing an under-bump metal on the whole surface of the wafer, fixing the wafer onto a projection exposure device and transferring patterns on the wafer. CONSTITUTION:Sections except aluminum electrodes 12 formed to a large number of chips formed onto a wafer 11 are coated with a passivation film 13, and an UBM (an under-bump metal) 14 is deposited on the whole surface of the wafer 11. The wafer 11 is fixed by a disc 17, to which a pawl 18 is shaped. The wafer 11 is irradiated with light having only the patterns of bumps from a projection section 20, and the bump patterns are transferred to a resist while patterns light-shielded by the pawl 18 are transferred. The resists on the electrodes 12 are removed through developing and etching while the UBM 14, from which the resists of sections light-shielded by the pawl 18 are removed, is exposed, thus forming a contact hole for plating.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title MANUFACTURE OF SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-16T18%3A12%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MIYAZAKI%20KAZUMI&rft.date=1992-02-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH0464237A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true