MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To improve yield by coating sections except an electrode formed on a wafer with a passivation film, depositing an under-bump metal on the whole surface of the wafer, fixing the wafer onto a projection exposure device and transferring patterns on the wafer. CONSTITUTION:Sections except aluminum electrodes 12 formed to a large number of chips formed onto a wafer 11 are coated with a passivation film 13, and an UBM (an under-bump metal) 14 is deposited on the whole surface of the wafer 11. The wafer 11 is fixed by a disc 17, to which a pawl 18 is shaped. The wafer 11 is irradiated with light having only the patterns of bumps from a projection section 20, and the bump patterns are transferred to a resist while patterns light-shielded by the pawl 18 are transferred. The resists on the electrodes 12 are removed through developing and etching while the UBM 14, from which the resists of sections light-shielded by the pawl 18 are removed, is exposed, thus forming a contact hole for plating.