FORMING METHOD OF POLYCIDE ELEMENT

FORMING METHOD OF POLYCIDE ELEMENT

PURPOSE:To form a highly reliable polycide element having a superior shape, by forming a metal silicide film on a semiconductor film, and selectively etching both of them at the same time. CONSTITUTION:On an insulating film 2 of a semiconductor substrate 1, a semiconductor film 3 is formed, on which...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: HAIDA OSAMU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator HAIDA OSAMU
description PURPOSE:To form a highly reliable polycide element having a superior shape, by forming a metal silicide film on a semiconductor film, and selectively etching both of them at the same time. CONSTITUTION:On an insulating film 2 of a semiconductor substrate 1, a semiconductor film 3 is formed, on which a metal silicide film 4 is formed. The semiconductor film 3 and the metal silicide film 4 and selectively etched. N-type or P-type impurity elements are introduced into the semiconductor film 3, and a polycide element is formed by heat treatment. Thereby etching characteristics of the semiconductor film 3 are improved, difference of etching characteristics is not generated between the films 3 and 4, and the polycide element having a superior shape can be formed. It is not necessary to form a high purity polycrystalline silicon film as an intermediate layer, so that a process for forming a polycide element can be omitted.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH0457321A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH0457321A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH0457321A3</originalsourceid><addsrcrecordid>eNrjZFBy8w_y9fRzV_B1DfHwd1Hwd1MI8PeJdPZ0cVVw9XH1dfUL4WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BHgYmpubGRoaOxkQoAQDxiCIg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FORMING METHOD OF POLYCIDE ELEMENT</title><source>esp@cenet</source><creator>HAIDA OSAMU</creator><creatorcontrib>HAIDA OSAMU</creatorcontrib><description>PURPOSE:To form a highly reliable polycide element having a superior shape, by forming a metal silicide film on a semiconductor film, and selectively etching both of them at the same time. CONSTITUTION:On an insulating film 2 of a semiconductor substrate 1, a semiconductor film 3 is formed, on which a metal silicide film 4 is formed. The semiconductor film 3 and the metal silicide film 4 and selectively etched. N-type or P-type impurity elements are introduced into the semiconductor film 3, and a polycide element is formed by heat treatment. Thereby etching characteristics of the semiconductor film 3 are improved, difference of etching characteristics is not generated between the films 3 and 4, and the polycide element having a superior shape can be formed. It is not necessary to form a high purity polycrystalline silicon film as an intermediate layer, so that a process for forming a polycide element can be omitted.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1992</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19920225&amp;DB=EPODOC&amp;CC=JP&amp;NR=H0457321A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19920225&amp;DB=EPODOC&amp;CC=JP&amp;NR=H0457321A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAIDA OSAMU</creatorcontrib><title>FORMING METHOD OF POLYCIDE ELEMENT</title><description>PURPOSE:To form a highly reliable polycide element having a superior shape, by forming a metal silicide film on a semiconductor film, and selectively etching both of them at the same time. CONSTITUTION:On an insulating film 2 of a semiconductor substrate 1, a semiconductor film 3 is formed, on which a metal silicide film 4 is formed. The semiconductor film 3 and the metal silicide film 4 and selectively etched. N-type or P-type impurity elements are introduced into the semiconductor film 3, and a polycide element is formed by heat treatment. Thereby etching characteristics of the semiconductor film 3 are improved, difference of etching characteristics is not generated between the films 3 and 4, and the polycide element having a superior shape can be formed. It is not necessary to form a high purity polycrystalline silicon film as an intermediate layer, so that a process for forming a polycide element can be omitted.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1992</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBy8w_y9fRzV_B1DfHwd1Hwd1MI8PeJdPZ0cVVw9XH1dfUL4WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BHgYmpubGRoaOxkQoAQDxiCIg</recordid><startdate>19920225</startdate><enddate>19920225</enddate><creator>HAIDA OSAMU</creator><scope>EVB</scope></search><sort><creationdate>19920225</creationdate><title>FORMING METHOD OF POLYCIDE ELEMENT</title><author>HAIDA OSAMU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0457321A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1992</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HAIDA OSAMU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HAIDA OSAMU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FORMING METHOD OF POLYCIDE ELEMENT</title><date>1992-02-25</date><risdate>1992</risdate><abstract>PURPOSE:To form a highly reliable polycide element having a superior shape, by forming a metal silicide film on a semiconductor film, and selectively etching both of them at the same time. CONSTITUTION:On an insulating film 2 of a semiconductor substrate 1, a semiconductor film 3 is formed, on which a metal silicide film 4 is formed. The semiconductor film 3 and the metal silicide film 4 and selectively etched. N-type or P-type impurity elements are introduced into the semiconductor film 3, and a polycide element is formed by heat treatment. Thereby etching characteristics of the semiconductor film 3 are improved, difference of etching characteristics is not generated between the films 3 and 4, and the polycide element having a superior shape can be formed. It is not necessary to form a high purity polycrystalline silicon film as an intermediate layer, so that a process for forming a polycide element can be omitted.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JPH0457321A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title FORMING METHOD OF POLYCIDE ELEMENT
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T00%3A20%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HAIDA%20OSAMU&rft.date=1992-02-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH0457321A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true