FORMING METHOD OF POLYCIDE ELEMENT

PURPOSE:To form a highly reliable polycide element having a superior shape, by forming a metal silicide film on a semiconductor film, and selectively etching both of them at the same time. CONSTITUTION:On an insulating film 2 of a semiconductor substrate 1, a semiconductor film 3 is formed, on which...

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Bibliographische Detailangaben
1. Verfasser:	HAIDA OSAMU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To form a highly reliable polycide element having a superior shape, by forming a metal silicide film on a semiconductor film, and selectively etching both of them at the same time. CONSTITUTION:On an insulating film 2 of a semiconductor substrate 1, a semiconductor film 3 is formed, on which a metal silicide film 4 is formed. The semiconductor film 3 and the metal silicide film 4 and selectively etched. N-type or P-type impurity elements are introduced into the semiconductor film 3, and a polycide element is formed by heat treatment. Thereby etching characteristics of the semiconductor film 3 are improved, difference of etching characteristics is not generated between the films 3 and 4, and the polycide element having a superior shape can be formed. It is not necessary to form a high purity polycrystalline silicon film as an intermediate layer, so that a process for forming a polycide element can be omitted.