SEMICONDUCTOR DEVICE

PURPOSE:To increase the bond strength of an input circuit pad part with a metallic wire by a method wherein a wire bonding pad formed of a polycide wiring is connected to a metallic wiring through contact windows provided in an interlayer insulating film to be further connected to a metallic wire on the metallic wiring. CONSTITUTION:The title semiconductor device is provided with a wire bonding pad formed of a polycide wire 6 to be connected to a metallic wiring 3 through multiple contact windows 8 provided in an interlayer insulating film 7 and a metallic wire 5 connected to the metallic wiring 3. For example, the polycide wiring 6 and the contact windows 8 connecting the metallic wiring 3 and the polycide wiring 6 with each other are provided beneath the metallic wiring pad 3 in an input circuit part. Through these procedures, the metallic wiring 3 will be taken in rugged shape by the contact windows 8 formed in the interlayer insulating film 7 as a lower layer so that the surface area of the upper and lower part of the metallic wiring 8 may be increased thereby enabling the bond strength between the metallic wiring 3 and the metallic wire 5 as well as the underneath interlayer insulating film 7 to be increased.