SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

PURPOSE:To set polycrystal or an amorphous region arbitrarily in a lamination which is acquired by epitaxial growth by providing a second semiconductor layer which is formed including a semiconductor layer whose lattice constant is different from that of a semiconductor layer. CONSTITUTION:Conventional surface pretreatment is performed for a silicon substrate 31. Fixing of dangling bond is performed for a region 32 wherein polycrystal is made to grow by a substance of low surface activity such as oxygen atom using STM. Thereafter, a thin film wherein a single crystal region 33a and a polycrystal region 33b coexist can be acquired by forming silicon by use of silane. A realized region of single crystal 33a and polycrystal 33b is arranged periodically two-dimensionally or three-dimensionally.