FORMATION OF ALUMINUM FILM

PURPOSE:To form an Al film having superior crystallinity and low specific resistivity by impressing a negative bias voltage in specific range on a base material at the time of sputtering an Al target by means of an inert gas ion beam in vacuum. CONSTITUTION:In vacuum, an inert gas ion beam 4 is extr...

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Bibliographische Detailangaben
Hauptverfasser:	INOUE DAISUKE, MAEKAWA HARUO, NOGAWA SHUICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To form an Al film having superior crystallinity and low specific resistivity by impressing a negative bias voltage in specific range on a base material at the time of sputtering an Al target by means of an inert gas ion beam in vacuum. CONSTITUTION:In vacuum, an inert gas ion beam 4 is extracted from an ion source 2 and an Al target is irradiated with this ion beam 4, by which Al grains 6a from the target 6 are deposited onto the surface of a base material 10 to form an Al film. At this time, a negative bias voltage in the range between -50 and -350V is impressed from a D.C. electric power source 14 via a holder 12 on the base material 10. By this method, a high-efficiency Al film having superior crystallinity and reduced in specific resistivity can be formed on the surface of the base material 10.