METHOD FOR CORRECTING PHOTOMASK

PURPOSE:To recover the resolution of deteriorated pattern images and to improve accuracy of correction by providing a process of holding a photomask in high vacuum following the process of recognizing the pattern with second ions. CONSTITUTION:The photomask 2 is fixed on a stage 1 and irradiated wit...

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Bibliographische Detailangaben
1. Verfasser:	OGURA TAKEISA
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To recover the resolution of deteriorated pattern images and to improve accuracy of correction by providing a process of holding a photomask in high vacuum following the process of recognizing the pattern with second ions. CONSTITUTION:The photomask 2 is fixed on a stage 1 and irradiated with an ion beam from an ion source 3, and second ions generating from the pattern are counted by a detector 4 for image processing to display the pattern image on a CRT 6. Then black defects or white defects are corrected by visual check of the pattern image. When the resolution of the pattern image is degraded because of repeated irradiation of ion beams, the mask 2 is held in high vacuum (e.g. higher vacuum than 10 Torr) for a certain period to recover the resolu tion, and then corrected. Or, instead of holding the mask in high vacuum, it is also preferable to treat the mask with oxygen plasma or far-UV ray.