THIN FILM FORMING DEVICE

PURPOSE:To prevent a material to be vaporized from being locally irradiated and heated by rotating a magnet around a crucible, deflecting and scanning an electron beam generated by a hollow electrode and irradiating the relatively large area on the surface of the material with the beam. CONSTITUTION...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KISHI MATSUO, SUZUKI TAMAAKI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To prevent a material to be vaporized from being locally irradiated and heated by rotating a magnet around a crucible, deflecting and scanning an electron beam generated by a hollow electrode and irradiating the relatively large area on the surface of the material with the beam. CONSTITUTION:A magnet 2 and a gear 3 are attached to a magnet holding ring 1. The ring 1 is driven by a motor 6 through a reduction gear 4 and a gear 5, and rotated around a crucible 7. A bearing 8 is used for smooth rotation. The direction of the magnetic field generated by the magnet 2 is rotated as the magnet 2 rotates. Accordingly, the Lorentz force for deflecting the electron beam 9 is also turned, and a material 10 to be vaporized is irradiated with the electron beam 9 while scanning it. The intensity of the magnetic field to be generated by the magnet 2 is controlled to about several to several ten Gauss in the vicinity of a hollow cathode 11. The speed of scanning the electron beam 9 can be changed by changing the turning rate of the magnet 2.