SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PURPOSE:To realize the large capacity and the small size of a capacitor, to enhance the reliability of a film and to easily dissipate heat from an element and interconnection by a method wherein an aluminum nitride film is used as an insulating film. CONSTITUTION:A vacuum tank 1 is evacuated to produce a vacuum. Aluminum is evaporated and ionized from a crucible 3 for evaporation use by using a hollow cathode type electron gun 2. Nitrogen gas is introduced in such a way that a nitrogen partial pressure inside the vacuum tank 1 becomes a prescribed pressure. After the evaporation, the ionization and the like have been stabilized, a shutter 4 is opened. An aluminum nitride film in 3mum is formed on a single- crystal silicon wafer 5 at a substrate temperature of 200 deg.C in 30min. In this case, when the aluminum nitride film is formed on the silicon by a reactive ion plating method, an excellent dielectric film and an excellent insulating protective film can be obtained. Thereby, the large capacity and the small size of a capacitor can be realized, the reliability of the film can be increased and heat from an element and an interconnection can be dissipated easily.