VAPOR GROWTH EQUIPMENT

PURPOSE:To keep the inside of a reaction vessel in a constant dry atmosphere, and remarkably reduce epitaxial crystal defect, by constituting the aperture part of a reaction vessel so as to be able to jet dry inert gas toward the outside of the reaction vessel. CONSTITUTION:After a necessary film forming process is finished, reaction gas supply is interrupted, and the following are started; purging with dry N2 gas from a sealing plate 4, purging from an N2 gas jetting equipment 10, and purging with dry N2 gas from the jet nozzle of a gas ring 5 operated by a switching valve 11. After the ascending of a susceptor 3, the aperture part of a reaction vessel 1 is sealed by dry N2 gas from a gas jetting equipment 10 installed on the gas ring 5. The inside of the vessel 1 is kept in a constant dry atmosphere by jetting dry N2 gas into the inside of the vessel 1 from the gas ring 5. Hence the attaching water content amount and the formation material due to reaction gas residue can be reduced, so that very excellent epitaxial growth is realized and the reduction of particles is enabled.