METHOD FOR DEVELOPING SINGLE CRYSTAL SUPERCONDUCTION MATERIAL

A method of growing an epitaxial like, single crystal, superconducting film (28) by promoting the epitaxial-like growth of film from a single nucleation site (24) in deference to substantially all other nucleation sites (29) on the substrate (14). The present invention contemplates the use of a mask...

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Bibliographische Detailangaben
Hauptverfasser:	SUTANFUOODO AARU OBUSHINSUKII, HERUMATSUTO FURIZUKU, ROUZA YANGU
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method of growing an epitaxial like, single crystal, superconducting film (28) by promoting the epitaxial-like growth of film from a single nucleation site (24) in deference to substantially all other nucleation sites (29) on the substrate (14). The present invention contemplates the use of a mask (18) to systematically expose sections of the substrate (14) to the deposition apparatus. This mask (18) may include an adjustable or fixed aperture (20B) and is manipulated as herein described to systematically expose areas of the substrate (14) to the deposition plasma (12).