MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To reduce contact resistance between wiring and a board and prevent the resistance of wiring to stress migration and electro-migration from being deteriorated as for the formation method of an aluminum Al group wiring. CONSTITUTION:When manufacturing a semiconductor device which has a cell section of a small current density and a peripheral circuit section of a large current density, there are formed interlaminar insulation films 3 and 4 on a silicon substrate 1 where a diffusion layer 2 is formed. There are included a process which opens a contact hole on the layer to layer insulation film on the diffusion layer, a process which clads a barrier metal comprising a high melting point metal and/or its chemical compound on the substrate and eliminate the barrier metal around the peripheral circuit section, and then a process which clads a metal film containing aluminum on the substrate and patterns the metal film so as to form wiring.