PATTERN FORMING METHOD
PURPOSE:To form resist patterns having a good sensitivity and resolution even if a photosensitive layer is subjected to a heat treatment after forming and exposing by using a specific naphthoquinone diazide compd. as a photosensitive agent. CONSTITUTION:This method has a stage for forming the photos...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PURPOSE:To form resist patterns having a good sensitivity and resolution even if a photosensitive layer is subjected to a heat treatment after forming and exposing by using a specific naphthoquinone diazide compd. as a photosensitive agent. CONSTITUTION:This method has a stage for forming the photosensitive layer essentially consisting of an alkaline-soluble resin and the photosensitive agent on a substrate, a stage for exposing the desired region of the photosensitive layer, a stage for subjecting the photosensitive layer to the heat treatment after the exposing, and a stage for developing the photosensitive layer after the heat treatment. The monofunctional naphthoquinone diazide compd. expressed by formula I is used as the photosensitive agent in such a case. In the formula I, R1 to R4 may be the same or different and respectively denote hydrogen, 1 to 6C unsubstd. or substd. alkyl group, halogen element, alkoxy group, cyano group, nitro group, carbonyl group, aryl group; R5 denotes a univalent org. group. Then, the resist patterns having the excellent sensitivity, the good resolution and the high reliability are formed. |
---|