MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To provide a semiconductor device which prevents short-circuiting between wirings and simplifies manufacturing process. CONSTITUTION:A title item is provided with a process for forming a silicon nitriding film (insulation film) 7 on a first semiconductor region 2, a process for forming a silicon oxide film (diffusion-prevention film) 13 out the silicon nitriding film 7, a process for eliminating the silicon nitriding film 7 and a silicon oxide film 3 on a region where a second region is scheduled to be formed within the first semiconductor region 2, a process for forming a second region by allowing impurities to be diffused into a region where a second region is scheduled to be formed, and a process for eliminating the silicon oxide film 3, thus preventing short-circuiting between wiring conductors which are formed on the insulation film and enabling a manufacturing process to be simplified.