JPH0434301B

JPH0434301B

Semiconductor devices (3) are fabricated that have precise uniform thickness regions formed by a self-limiting process in which light (5) generated hole-electron pairs are used as a source of current in electrochemical erosion. A self-aligned MESFET semiconductor structure (Figs. 1 and 4) has the ga...

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Bibliographische Detailangaben
Hauptverfasser: TERII AIBAN CHAPERU, JOOJI DEEBITSUDO PETEITSUTO, JERII MAKUFUAASUN UTSUDOORU
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS
SEMICONDUCTOR DEVICES
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Zusammenfassung:Semiconductor devices (3) are fabricated that have precise uniform thickness regions formed by a self-limiting process in which light (5) generated hole-electron pairs are used as a source of current in electrochemical erosion. A self-aligned MESFET semiconductor structure (Figs. 1 and 4) has the gate (15) positioned in etched undercuts (13, 14) of the source and drain regions (9-12). Arrays of enhancement and depletion mode FET devices can be made on the same substrate.