SEMICONDUCTOR INTEGRATED CIRCUIT

PURPOSE:To make the circuit board potential of a semiconductor integrated circuit deeper when the device is operated at a low voltage. CONSTITUTION:A signal outputted from an oscillator becomes a signal phi12 after passing through inverters I11 and I12 and further becomes another signal phi11 after...

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1. Verfasser: IIZUKA NAMIKO
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To make the circuit board potential of a semiconductor integrated circuit deeper when the device is operated at a low voltage. CONSTITUTION:A signal outputted from an oscillator becomes a signal phi12 after passing through inverters I11 and I12 and further becomes another signal phi11 after passing through an inverter I13. Capacities C11 and C12 are respectively connected with the signal phi11 and a node N11 and signal phi12 and a node N12. The source of an N-type transistor Q11 is connected with the node N11 and the gate and drain of the transistor Q11 constitute the output of this semiconductor integrated circuit. The source, gain, and gate of a P-type transistor Q12 are respectively connected with the node N11, Node N12, and a grounding potential. In addition, the substrate of the transistor Q12 is connected with the signal phi11. The source and gate of an N-type transistor Q13 are connected with the node N12 and the drain of the transistor Q13 is connected with the grounding potential. Therefore, the potential outputted to the substrate of this semiconductor integrated circuit can be made deeper even when the power supply voltage drops to a certain level.