SURFACE ACOUSTIC WAVE CONVOLVER DEVICE
PURPOSE:To save the wire bonding process through the use of the face bonding method, to improve the mechanical strength and to eliminate the effect on its characteristic due to a rough surface adopted for the rear side of an element. CONSTITUTION:An epitaxial Si layer 26, an insulation film 27 and a...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | PURPOSE:To save the wire bonding process through the use of the face bonding method, to improve the mechanical strength and to eliminate the effect on its characteristic due to a rough surface adopted for the rear side of an element. CONSTITUTION:An epitaxial Si layer 26, an insulation film 27 and a ZnO piezoelectric film 21 are sequentially formed on a low resistance Si layer 25. A couple of input interdigital electrodes are formed on the piezoelectric film 21 and an output electrode is formed between them. A low resistance layer 28 of the same type as the low resistance Si layer 25 is exposed to a part on the same plane as the interdigital electrodes and the output electrode 23 except a surface acoustic wave propagation part and an electrode pattern equivalent to a ground electrode of a conventional structure is formed on the surface. Through on the constitution above, since the ground input interdigital electrodes, the output electrode and the electrode are all provided on the element surface, the face bonding method is applied to the device. |
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