VAPOR PHASE SYNTHESIS OF SINGLE CRYSTAL DIAMOND FILM

PURPOSE:To decrease crystalline defects and irregularities of a diamond single crystal film by specifying the relation between the mol concentration of carbon atom in mixed gas of a carbon containing compound and hydrogen and the partial pressure of mixed gas of a synthetic atmosphere. CONSTITUTION:...

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Bibliographische Detailangaben
Hauptverfasser:	OOTA TOMOHIRO, KONDO HIDEKAZU, SEKIHASHI HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To decrease crystalline defects and irregularities of a diamond single crystal film by specifying the relation between the mol concentration of carbon atom in mixed gas of a carbon containing compound and hydrogen and the partial pressure of mixed gas of a synthetic atmosphere. CONSTITUTION:Mixed gas of a carbon containing compound and hydrogen is introduced in a reaction pipe 2. By controlling a pressure adjusting valve 4, the relation between the mol concentration C(%) of carbon atom to the total number of mol molecules of the mixed gas and the partial pressure P(Torr) of mixed gas in a synthetic atmosphere us adjusted so that it may be represented by CXP/100>1. Then, a microwave oscillator 6 is operated to crystallize a diamond single crystal film on a substrate 1.