STRUCTURIZING METHOD

PURPOSE: To improve/develop a method wherein, in a structuring method for a semiconductor supporting body comprising basic doping, at least one main surface of the semiconductor supporting body is deactivated using a masking layer and at the masking layer, formed by anisotropic etching. CONSTITUTION...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	IERUKU MUUHOFU, HANSUUPEETAA TORAA, GIYUNTAA FUINDORAA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE: To improve/develop a method wherein, in a structuring method for a semiconductor supporting body comprising basic doping, at least one main surface of the semiconductor supporting body is deactivated using a masking layer and at the masking layer, formed by anisotropic etching. CONSTITUTION: As a masking layer 12, a structured layer of the same material as the basic material of semiconductor supporting body is used. The layer is, between the masking layer 12 and a supporting body 10, so doped that a p/n-junction part used as an etch stop, polarized in prevention-direction, is formed.