ALLIGNED SUPERCONDUCTIVE FILM AND EPITAXIAL METHOD OF GROWING SAID FILM

A thin film, fluorinated, ceramic defect-oxide type superconducting, epitaxial-like material grown on a non-epitaxial substrate, such as sapphire or stainless steel. The superconducting material is characterized by basal plane alignment of the unit cells thereof even though the substrate does not po...

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Bibliographische Detailangaben
Hauptverfasser: ROOZA YANGU, SUTANFUOODO AARU OBUSHINSUKII
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A thin film, fluorinated, ceramic defect-oxide type superconducting, epitaxial-like material grown on a non-epitaxial substrate, such as sapphire or stainless steel. The superconducting material is characterized by basal plane alignment of the unit cells thereof even though the substrate does not possess perovskite-type lattice structure. A laser ablation technique is used to evaporate material from a fluorinated pellet of target material to deposit the fluorinated superconducting material on the substrate. The instant invention provides for a low pressure and relatively low temperature method of depositing a superconducting film which is characterized by (1) a minimal number of high angle grain boundaries typically associated with polycrystalline films, and (2) aligned a, b, and c axes of the unit cells thereof so as to provide for enhanced current carrying capacities. Large area, irregularly shaped and rolls of inexpensive substrate material can be uniformly covered by the method described herein.