PRODUCTION OF SINGLE CRYSTAL

PRODUCTION OF SINGLE CRYSTAL

PURPOSE:To make the concn. of oxygen in a single crystal sufficient to produce IG effect and to uniformize the resistivity distribution of the single crystal in the pulling direction. CONSTITUTION:When an impurity is added to a melt 5 in a crucible 2 and a single crystal 8 is pulled from the melt 5,...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KURAMOCHI KAORU, ITO MASATO
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:PURPOSE:To make the concn. of oxygen in a single crystal sufficient to produce IG effect and to uniformize the resistivity distribution of the single crystal in the pulling direction. CONSTITUTION:When an impurity is added to a melt 5 in a crucible 2 and a single crystal 8 is pulled from the melt 5, an inverted truncated cone-shaped cooling body 9 with a cooling ring 9b connected to the lower end is set around the pulling region so that the ring 9b is positioned opposite to the melt 5 and the concn. of oxygen in the single crystal 8 is controlled by cooling the surface of the melt 5 with the ring 9b. An evaporation inhibiting ring 11 is further set around the cooling ring 9b and the resistivity of the single crystal 8 is controlled by inhibiting the evaporation of the impurity with the ring 11.