MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent connection failure by allowing a first-layer wiring of a through-hole part to be in projecting shape for reducing level difference between wirings in a wiring connection part. CONSTITUTION:A first-layer wiring 1 is obtained by sputtering with a film thickness which is thicker than a desired film thickness when forming the first- layer wiring 1. After that, a negative resist is coated, photoengraving is performed by a through-hole mask, and then a resist pattern 2 is formed at a part where the through-hole is formed. At this time, an upper part of the first-layer wiring is etched by etching parameters for obtaining a desired film thickness of the first-layer wiring. Therefore, a projecting part 5 is formed on the first-layer wiring at through-hole opening parts, thus enabling level difference between upper and lower wirings of a through-hole part 3 to be reduced due to this projecting part 5, facilitating connection between the first-layer wiring 1 and a second-layer wiring 6; improving coverage of the second-layer wiring, and preventing connection failure between wirings.