MASK FOR X-RAY LITHOGRAPHY AND X-RAY LITHOGRAPHY ALIGNER

PURPOSE:To make it possible to perform highly accurate exposure by correcting the intensity of synchrotron radiation which is applied to a mask for X-ray lighography based on the distribution of the film thickness of the mask for X-ray lithography. CONSTITUTION:Synchrotron radiation 11 which is emit...

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Bibliographische Detailangaben
Hauptverfasser:	WATANABE YUTAKA, HAYASHIDA MASAMI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To make it possible to perform highly accurate exposure by correcting the intensity of synchrotron radiation which is applied to a mask for X-ray lighography based on the distribution of the film thickness of the mask for X-ray lithography. CONSTITUTION:Synchrotron radiation 11 which is emitted from a light emitting source 10 is expanded into a size large enough for its application to an exposure region with a fixed convex mirror and is applied to an X-ray transmitting film 16 of an X-ray mask 14. The X-ray mask 14 is arranged so that the changing direction of the distribution of the thickness of the X-ray transmitting film 16 agrees with the changing direction of the intensity distribution of the synchrotron radiation 11. A shutter 13 wherein an opening part 19 is formed is moved in the above described changing direction with respect to the exposure region. The moving speed is changed in response to the changes in the intensity of the synchrotron radiation 11 and the thickness of the X-ray transmitting film 16. In this way, the illuminating time for the exposure region with the syncrotron radiation 11 is changed.