ECR PLASMA TREATING DEVICE
PURPOSE:To form a diffused magnetic field capable of uniformizing the infrasurface distribution of the speed to treat the surface of a substrate in the ECR plasma treating device in which ECR plasma is produced by the interaction between the magnetic field and microwave in the cylindrical microwave...
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creator | NAGAO YASUAKI |
description | PURPOSE:To form a diffused magnetic field capable of uniformizing the infrasurface distribution of the speed to treat the surface of a substrate in the ECR plasma treating device in which ECR plasma is produced by the interaction between the magnetic field and microwave in the cylindrical microwave resonator, and the plasma is introduced into the adjacent reaction chamber from the plasma drawing port in the end face of the resonator by the diffused magnetic field to apply CVD, etc., to the surface of the substrate in the reaction chamber. CONSTITUTION:A diffused magnetic field is formed by the cylindrical solenoid 6 arranged coaxially with a cylindrical microwave resonator 5, the length of the solenoid 6 is controlled to 0.8 times its inner diameter to reduce the axial thickness of the ECR resonance magnetic flux density region, hence the effect of the radial thickness distribution of the region on the radial distribution of the plasma density is reduced at the substrate position, and the end of the solenoid where the radial distribution of the magnetic flux density is uniformized or an external magnetic field is utilized for the treatment. |
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CONSTITUTION:A diffused magnetic field is formed by the cylindrical solenoid 6 arranged coaxially with a cylindrical microwave resonator 5, the length of the solenoid 6 is controlled to 0.8 times its inner diameter to reduce the axial thickness of the ECR resonance magnetic flux density region, hence the effect of the radial thickness distribution of the region on the radial distribution of the plasma density is reduced at the substrate position, and the end of the solenoid where the radial distribution of the magnetic flux density is uniformized or an external magnetic field is utilized for the treatment.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1992</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19921009&DB=EPODOC&CC=JP&NR=H04285174A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19921009&DB=EPODOC&CC=JP&NR=H04285174A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAGAO YASUAKI</creatorcontrib><title>ECR PLASMA TREATING DEVICE</title><description>PURPOSE:To form a diffused magnetic field capable of uniformizing the infrasurface distribution of the speed to treat the surface of a substrate in the ECR plasma treating device in which ECR plasma is produced by the interaction between the magnetic field and microwave in the cylindrical microwave resonator, and the plasma is introduced into the adjacent reaction chamber from the plasma drawing port in the end face of the resonator by the diffused magnetic field to apply CVD, etc., to the surface of the substrate in the reaction chamber. CONSTITUTION:A diffused magnetic field is formed by the cylindrical solenoid 6 arranged coaxially with a cylindrical microwave resonator 5, the length of the solenoid 6 is controlled to 0.8 times its inner diameter to reduce the axial thickness of the ECR resonance magnetic flux density region, hence the effect of the radial thickness distribution of the region on the radial distribution of the plasma density is reduced at the substrate position, and the end of the solenoid where the radial distribution of the magnetic flux density is uniformized or an external magnetic field is utilized for the treatment.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1992</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJBydQ5SCPBxDPZ1VAgJcnUM8fRzV3BxDfN0duVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GJkYWpobmJo7GxKgBACM0IEc</recordid><startdate>19921009</startdate><enddate>19921009</enddate><creator>NAGAO YASUAKI</creator><scope>EVB</scope></search><sort><creationdate>19921009</creationdate><title>ECR PLASMA TREATING DEVICE</title><author>NAGAO YASUAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH04285174A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1992</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>NAGAO YASUAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAGAO YASUAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ECR PLASMA TREATING DEVICE</title><date>1992-10-09</date><risdate>1992</risdate><abstract>PURPOSE:To form a diffused magnetic field capable of uniformizing the infrasurface distribution of the speed to treat the surface of a substrate in the ECR plasma treating device in which ECR plasma is produced by the interaction between the magnetic field and microwave in the cylindrical microwave resonator, and the plasma is introduced into the adjacent reaction chamber from the plasma drawing port in the end face of the resonator by the diffused magnetic field to apply CVD, etc., to the surface of the substrate in the reaction chamber. CONSTITUTION:A diffused magnetic field is formed by the cylindrical solenoid 6 arranged coaxially with a cylindrical microwave resonator 5, the length of the solenoid 6 is controlled to 0.8 times its inner diameter to reduce the axial thickness of the ECR resonance magnetic flux density region, hence the effect of the radial thickness distribution of the region on the radial distribution of the plasma density is reduced at the substrate position, and the end of the solenoid where the radial distribution of the magnetic flux density is uniformized or an external magnetic field is utilized for the treatment.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | ECR PLASMA TREATING DEVICE |
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