MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To furnish a manufacturing method of a semiconductor device which makes it possible to conduct a sufficient curing processing of an interlayer insulating film, to prevent production of an H2O gas out of the film even when heat treatment is executed after the curing processing, and to prevent deterioration of the film quality of an upper-layer wiring layer and an increase of a contact resistance of the upper-layer wiring layer with a lower-layer wiring layer. CONSTITUTION:While silicon alkoxide is introduced continuously into a reaction chamber 9, ozone is introduced thereinto intermittently. When the ozone is introduced intermittently, the silicon alkoxide and the ozone are made to react with each other in a vapor phase or on the surface of a film 4 of the ground and thereby an insulating film 5a containing silanol is formed on the film 4 of the ground. When the ozone is not introduced intermittently, on the other hand, a process of heating and condensing the insulating film 5a in an atmosphere of oxygen is made to be included.