FORMATION OF FINE PATTERN

PURPOSE:To increase the number of print-resisting times by a method wherein an inorganic resist film is etched through an organic resist pattern to form a masking layer made of inorganic resist on a substrate and a plated layer is formed on a part of the substrate where the masking layer is not form...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KUBOZONO KENICHI, OKAZAKI AKIRA
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CINEMATOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FREQUENCY-CHANGING HOLOGRAPHY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS MATERIALS THEREFOR NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PRINTED CIRCUITS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE:To increase the number of print-resisting times by a method wherein an inorganic resist film is etched through an organic resist pattern to form a masking layer made of inorganic resist on a substrate and a plated layer is formed on a part of the substrate where the masking layer is not formed and then the plated layer is transferred to the material to be processed. CONSTITUTION:An organic resist layer 3 is formed on an inorganic resist layer 2 which is formed on a conductive board 1. Then, a photo mask 4 having the specified black patterns 4a is laid on top of the organic resist layer 3 and ultraviolet rays is cast on the organic resist layer 3. After that, the substrate is developed to remove the organic resist layer 3 of the areas on which, ultraviolet rays was not cast for forming an organic resist pattern 3' having recessed parts 3a. Nextly, the inorganic resist layer 2 is etched through the recessed parts 3a of the pattern 3' and then the pattern 3' is removed to form a masking layer 2' which is made of organic resist that has recessed parts 2a. By this method, a fine pattern can be fabricated very accurately and efficiently.