MONITORING METHOD IN DRY ETCHING EQUIPMENT

PURPOSE:To provide a monitoring method in a dry etching equipment that can correctly evaluate whether or not the etching state is normal regardless of the structure of the substrate electrode and dirty window for introducing light. CONSTITUTION:Characteristic is that, in a dry etching equipment that...

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Bibliographische Detailangaben
Hauptverfasser: HOUCHIN RIYUUZOU, TOMITA KAZUYUKI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To provide a monitoring method in a dry etching equipment that can correctly evaluate whether or not the etching state is normal regardless of the structure of the substrate electrode and dirty window for introducing light. CONSTITUTION:Characteristic is that, in a dry etching equipment that dry-etches a conductive thin. film 1 on a substrate 16 by using plasma, the potential of the conductive thin film 1 under dry-etching is measured by contacting a probe 18 on the surface of the conductive thin film 1, and it is evaluated whether the state of the plasma is normal or not on the basis of this measurement results.