GAAS HETEROSTRUCTURE PROVIDED WITH STRESS COMPENSATION LAYER

PURPOSE: To provide a GaAs MODFET having high frequency and high speed characteristics, concerning an irregular GaAs MODFET having a stress compensating layer. CONSTITUTION: Irregular hetero-structure is composed of a GaAs substrate 11, GaAsy P1-y stress compensating layer 12 formed on the GaAs subs...

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1. Verfasser:	REIMONDO KEI TSUI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE: To provide a GaAs MODFET having high frequency and high speed characteristics, concerning an irregular GaAs MODFET having a stress compensating layer. CONSTITUTION: Irregular hetero-structure is composed of a GaAs substrate 11, GaAsy P1-y stress compensating layer 12 formed on the GaAs substrate and Inx Ga1-x As channel layer 18. The lattice constant of a stress compensating layer 12 is lower than the lattice constant of a GaAs substrate 11, and the lattice constant of the formed channel layer 18 is selected to have an optimum thickness and doping conditions so as to be higher than the lattice constant of the GaAs substrate 11.