PRODUCTION OF T1-CONTAINING OXIDE SUPERCONDUCTING THIN FILM

PURPOSE:To efficiently and surely introduce T1 into a film in a film forming device and to produce a T1-contg. superconducting thin film having superior crystallinity, surface properties and high Tce. CONSTITUTION:A film consisting of the constituents of a T1-contg. oxide superconductor expept T1 is...

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Hauptverfasser:	KONNO YOSHITO, YOSHISATO MASANOBU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CONDUCTORS ELECTRICITY INORGANIC CHEMISTRY INSULATORS METALLURGY SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
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Beschreibung
Zusammenfassung:	PURPOSE:To efficiently and surely introduce T1 into a film in a film forming device and to produce a T1-contg. superconducting thin film having superior crystallinity, surface properties and high Tce. CONSTITUTION:A film consisting of the constituents of a T1-contg. oxide superconductor expept T1 is formed by chemical vapor deposition in a reaction tube 1 and this tube 1 is filled with T12O3 vapor to introduce T1 into the film. When a layer-by-layer process is adopted, the distribution of T1 in the film is made uniform, a single phase is formed and a T1-contg. superconductive thin film having a controlled laminator structure is produced.