METHOD OF PROGRAMMING NON-VOLATILE MEMORY-CELL AND MEMORY-CELL-ARRAY

PURPOSE: To program non-volatile memory cells, which are formed on the face of a 1st conductive type semiconductor layer and have 2nd conductive type source and drain areas separated by a channel, speedily as much as possible. CONSTITUTION: Concerning this non-volatile storage cell, a floating gate is provided adjacently to a channel 18 while being insulated, and a control gate 24 is provided adjacently to the floating gate 22 while being insulated. A 1st voltage is impressed to a source area 14, a 2nd voltage is impressed to a drain area 16, and electrons are stored in the floating gate 22. At such a time, a voltage pulse to be timewisely changed is impressed to the control gate 24 so that the potential of the floating gate 22 can be suppressed almost constant.