ELECTRODE CONSTRUCTION FOR SEMICONDUCTOR

PURPOSE:To make it possible to easily recognize the optimum location of wire bonding at coordinate input during wire bonding by forming a mark showing the optimum location of wire bonding on a pad. CONSTITUTION:A pad is formed to 100mumX100mum approximately by a second- layer aluminum film 1 with the film thickness of 1.0mum which is the wiring for the top layer. In the process of providing an opening on an arbitrary element electrode over an silicon oxide film 7 over a thick LOCOS oxide film 6 for element isolation, a marking groove 9 of 20mumX20mum is provided at the center of the pad. By doing this, a mark fully identifiable during coordinate input of wire bonding can be formed.