ETCHING METHOD

ETCHING METHOD

PURPOSE: To lower the etching rate of a Ti disilicide, Ti nitride or Si dioxide lower layer to keep the etching rate of a W and Ti-W films at a high level. CONSTITUTION: A negative voltage is applied to an object having a W-contg. film, the object is exposed to a plasma environment contg. a mixture...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: CHIEN SHII RIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: To lower the etching rate of a Ti disilicide, Ti nitride or Si dioxide lower layer to keep the etching rate of a W and Ti-W films at a high level. CONSTITUTION: A negative voltage is applied to an object having a W-contg. film, the object is exposed to a plasma environment contg. a mixture of CF-4- and O2 fed in the reactive ion etching condition to etch a W or W alloy film. A TiW surface layer 12 is e.g. formed on an SiO2 lower layer 14 on a support layer 16 such as Si wafer and a mask 18 of desired pattern is formed thereon. Resultant laminate 10 is fed in a plasma etching reactor to selectively etch the TiW surface layer 12 at a pressure of 30mTorr, temp. 45 deg.C, electrode voltage of -100V, CF4 flow rate of 40sccm, and O2 flow rate of 20sccm and then the mask 18 is removed.