MANUFACTURE OF ABRASION SILICON WAFER WITH STORAGE STABILITY SURFACE

PURPOSE: To make a wafer processed in an improved in storage stability and maintain the surface characteristic even under a severs weather environment and to especially easily restore the surface characteristic after an oxidation processing, followed by performing hydrolysis. CONSTITUTION: In this m...

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Bibliographische Detailangaben
Hauptverfasser:	DEIITAA GUREEFU, ROZEMARII BUINKURUHARERU, BUORUFUGANGU FUIHITONAA, PEETAA YOON, RASUTSURO FUAPURI, MANFUREETO GURUNTONAA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: To make a wafer processed in an improved in storage stability and maintain the surface characteristic even under a severs weather environment and to especially easily restore the surface characteristic after an oxidation processing, followed by performing hydrolysis. CONSTITUTION: In this method, after the oxidation processing, the silicon wafer is exposed to an organic silicon compound provided with at least one radical connected hydrolyzably to a silicon atom in a molecule, for which at least one radical in the molecule is provided with a hydrophilic characteristic. The strong hydrophilic characteristic or hydrophobic characteristic of the surface of the silicon wafer are imparted under gentle conditions, even though differences in levels exist according to the compound selected exist.