PHASE EXCHANGE TYPE REVERSIBLE OPTICAL RECORDING CARRIER

PURPOSE: To provide an optical recording carrier based on a phase exchange medium capable of assuring the high safety of regions where a memory layer has the information of different degrees of crystallization in spite of rapid erasability and solving the problems of the sufficient corrosion resista...

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Bibliographische Detailangaben
Hauptverfasser:	HARUTOMUUTO HIBUSUTO, SHIYUTEFUAN IZERUBORUN, GERUTO FUITSUSHIYAA
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COLOUR PRINTING DIFFUSION TREATMENT OF METALLIC MATERIAL INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LINING MACHINES METALLURGY PERFORMING OPERATIONS PHYSICS PRINTING PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES STAMPS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TYPEWRITERS
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Beschreibung
Zusammenfassung:	PURPOSE: To provide an optical recording carrier based on a phase exchange medium capable of assuring the high safety of regions where a memory layer has the information of different degrees of crystallization in spite of rapid erasability and solving the problems of the sufficient corrosion resistance of the recording carrier, the decay of signals and a poor signal-to-noise ratio by self-erasing. CONSTITUTION: This recording carrier has at least three states of different optical behaviors which are reversibly changeable over each other. At least, the three states of the different optical behaviors have the different capacity components of the crystal phase and the amorphous phase in the memory layer. The difference in the reflectability between, at least, one pair of the state is larger than in the case of between the amorphous state and the crystal state.