GATE WIRING OF FILM TRANSISTOR CIRCUIT

PURPOSE:To provide the gate wiring of a film transistor circuit, where favorable ohmic contact can be gotten even if the gate wiring is put in the three-layer structure of Ta/Cu/Ta. CONSTITUTION:The gate wiring of a film transistor is constituted of, from the side of the lower layer, the first metal...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TANAKA SAKAE, OGIWARA YOSHIHISA, SHIRAI KATSUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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