GATE WIRING OF FILM TRANSISTOR CIRCUIT

GATE WIRING OF FILM TRANSISTOR CIRCUIT

PURPOSE:To provide the gate wiring of a film transistor circuit, where favorable ohmic contact can be gotten even if the gate wiring is put in the three-layer structure of Ta/Cu/Ta. CONSTITUTION:The gate wiring of a film transistor is constituted of, from the side of the lower layer, the first metal...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TANAKA SAKAE, OGIWARA YOSHIHISA, SHIRAI KATSUO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE:To provide the gate wiring of a film transistor circuit, where favorable ohmic contact can be gotten even if the gate wiring is put in the three-layer structure of Ta/Cu/Ta. CONSTITUTION:The gate wiring of a film transistor is constituted of, from the side of the lower layer, the first metallic layer 12, the second metallic layer 13, which has copper for its main ingredient, and the third metallic layer 14, and the third metallic layer 14 is made of metal such as molybdenum (Mo), chromium (Cr), or the like, where favorable ohmic contact can be gotten between connection layers.