MANUFACTURE OF GROOVE STRUCTURE ON SILICON SUBSTRATE

PURPOSE: To manufacture a groove structure 3 provided with vertical and smooth side walls 4 and a straight and flat groove bottom 5 inside a silicon substrate 1 by a simple etching processing. CONSTITUTION: Reactive ion etching is executed in a low-pressure range in an etching gas atmosphere entirely composed of chlorine under the use of an etching mask 2 made of SiO2 favorably inside a triode single flat disk reactor. In this case, differently from a well-known ion etching method, a processing is performed at an allowable etching speed by the simple etching processing not containing carbon.