FORMATION OF THIN FILM BY PLASMA CVD

PURPOSE:To form a thin film of uniform composition with good reproducibility by supplying a raw gas from the center of a gas inlet pipe and a cooling gaseous diluent from its periphery. CONSTITUTION:A vacuum chamber 1 is evacuated by a vacuum pump 6, and a mixture of N2 and H2 gas with the flow rate...

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Hauptverfasser:	OTSU HIDEHIKO, YAGINUMA YOSHIKAZU, ISHII YOSHIRO, FUNAKI YOSHIYUKI, KOBAYASHI KUNIAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To form a thin film of uniform composition with good reproducibility by supplying a raw gas from the center of a gas inlet pipe and a cooling gaseous diluent from its periphery. CONSTITUTION:A vacuum chamber 1 is evacuated by a vacuum pump 6, and a mixture of N2 and H2 gas with the flow rate controlled by a mass flow controller 12 is supplied to the chamber 1 from a ring nozzle 8 through the periphery of a duplex inlet pipe. A DC voltage is impressed to produce plasma, and the surface of a three-dimensional substrate 13 is cleaned. The TiCl4 and H2 with the flow rates controlled by the controller 12 are mixed, the mixture is supplied to the chamber 1 from the large-diameter ring nozzle 8 through the center of the duplex pipe (a), and plasma CVD is carried out at 500 deg.C and 1Torr for 2hr to form a thin film on the surface of the large-sized three- dimensional substrate 13.