PLANAR TYPE JOSEPHSON ELEMENT AND MANUFACTURE THEREOF

PURPOSE:To enable an S layer, an I layer, and an S layer to be epitaxially grown and to obtain an element where superconductive electron pairs are made to move in a certain direction by a method wherein a first and a second oxide superconductive thin film are made to constitute a junction through the intermediary of an insulating film on the sloping end face of the first oxide superconductive thin film. CONSTITUTION:A first oxide superconductive thin film 2 is formed on a part of a single-crystal substrate 1, and the end face of the thin film 2 is formed into a slope 3. An insulating film 4 is formed the slope 3, the thin film 2, and the residual part of the substrate 1, and furthermore a second oxide superconductive thin film 5 is formed on the insulating film 4. By this setup, in a junction of composed of a superconductor S, an insulator I, and a superconductor S, all the S layer, the I layer, and the S layer are epitaxially grown orientated in a c-axis vertical to the surface of the substrate 1, and an ab-plane is formed parallel with the surface of the substrate 1, whereby an SIS junction is formed in this direction.