TE-DOPED ACOUSTOOPTICAL ELEMENT
PURPOSE:To form an acoustooptical element, excellent in light transmitting characteristics and simultaneously keeping high performance and quality by doping Te in a GaP crystal and limiting the carrier concentration of the crystal within a specific range. CONSTITUTION:The aforementioned acoustooptic...
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| creator | OGAWA TAKASHI CHINO KENICHI |
| description | PURPOSE:To form an acoustooptical element, excellent in light transmitting characteristics and simultaneously keeping high performance and quality by doping Te in a GaP crystal and limiting the carrier concentration of the crystal within a specific range. CONSTITUTION:The aforementioned acoustooptical element is a GaP semiconductor element doped with Te. The carrier concentration in the above-mentioned element at 300 deg.K is regulated to >=3X10 to |
| format | Patent |
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CONSTITUTION:The aforementioned acoustooptical element is a GaP semiconductor element doped with Te. The carrier concentration in the above-mentioned element at 300 deg.K is regulated to >=3X10 to <=20X10 cm<-3>.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; FREQUENCY-CHANGING ; METALLURGY ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1992</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920610&DB=EPODOC&CC=JP&NR=H04164900A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920610&DB=EPODOC&CC=JP&NR=H04164900A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OGAWA TAKASHI</creatorcontrib><creatorcontrib>CHINO KENICHI</creatorcontrib><title>TE-DOPED ACOUSTOOPTICAL ELEMENT</title><description>PURPOSE:To form an acoustooptical element, excellent in light transmitting characteristics and simultaneously keeping high performance and quality by doping Te in a GaP crystal and limiting the carrier concentration of the crystal within a specific range. CONSTITUTION:The aforementioned acoustooptical element is a GaP semiconductor element doped with Te. The carrier concentration in the above-mentioned element at 300 deg.K is regulated to >=3X10 to <=20X10 cm<-3>.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>FREQUENCY-CHANGING</subject><subject>METALLURGY</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1992</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAPcdV18Q9wdVFwdPYPDQ7x9w8I8XR29FFw9XH1dfUL4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BHgYmhmYmlgYGjsbEqAEA3pEh3g</recordid><startdate>19920610</startdate><enddate>19920610</enddate><creator>OGAWA TAKASHI</creator><creator>CHINO KENICHI</creator><scope>EVB</scope></search><sort><creationdate>19920610</creationdate><title>TE-DOPED ACOUSTOOPTICAL ELEMENT</title><author>OGAWA TAKASHI ; CHINO KENICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH04164900A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1992</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>FREQUENCY-CHANGING</topic><topic>METALLURGY</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>OGAWA TAKASHI</creatorcontrib><creatorcontrib>CHINO KENICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OGAWA TAKASHI</au><au>CHINO KENICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TE-DOPED ACOUSTOOPTICAL ELEMENT</title><date>1992-06-10</date><risdate>1992</risdate><abstract>PURPOSE:To form an acoustooptical element, excellent in light transmitting characteristics and simultaneously keeping high performance and quality by doping Te in a GaP crystal and limiting the carrier concentration of the crystal within a specific range. CONSTITUTION:The aforementioned acoustooptical element is a GaP semiconductor element doped with Te. The carrier concentration in the above-mentioned element at 300 deg.K is regulated to >=3X10 to <=20X10 cm<-3>.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING METALLURGY NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | TE-DOPED ACOUSTOOPTICAL ELEMENT |
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