TE-DOPED ACOUSTOOPTICAL ELEMENT

PURPOSE:To form an acoustooptical element, excellent in light transmitting characteristics and simultaneously keeping high performance and quality by doping Te in a GaP crystal and limiting the carrier concentration of the crystal within a specific range. CONSTITUTION:The aforementioned acoustooptic...

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Bibliographische Detailangaben
Hauptverfasser:	OGAWA TAKASHI, CHINO KENICHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING METALLURGY NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To form an acoustooptical element, excellent in light transmitting characteristics and simultaneously keeping high performance and quality by doping Te in a GaP crystal and limiting the carrier concentration of the crystal within a specific range. CONSTITUTION:The aforementioned acoustooptical element is a GaP semiconductor element doped with Te. The carrier concentration in the above-mentioned element at 300 deg.K is regulated to >=3X10 to