MANUFACTURE OF SOLID STATE IMAGE PICKUP DEVICE

PURPOSE:To manufacture a solid image pickup element, which can reduce the dark current of a photoelectric transfer part and the noise of the device, by forming a gate oxide film and an electrode at the surface of a semiconductor substrate, and then, depositing an insulating film by chemical vapor growth so as to cover the electrode. CONSTITUTION:N-type impurities are introduced to the surface of a second P-type well 23 so as to form a buried channel 24, and a P-type picture element isolating region 25 is formed adjacently to the buried channel 24. Next, this substrate 21 is oxidized to form a gate oxide film 26 all over the surface 21a of the substrate, and through this gate oxide film 26, a gate electrode 27 consisting of polysilicon is formed on each buried channel 24. Next, on the substrate 11, an interlayer insulating film 30 is stacked by chemical vapor growth method so as to cover the gate electrode 27. Accordingly, as compared with conventional, the number of oxidization of the substrate 21 can be reduced, and stress can be prevented from being exerted upon the substrate 21, especially, the photoelectric transfer part 202, and the dark currents of the photoelectric transfer part 202 can be reduced.