NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

PURPOSE:To operate a device with 1.5V battery voltage and to read out data at a high speed by pairing bit lines and providing sense amplifiers and a register between each pair of them. CONSTITUTION:Bit lines 4 are paired, and sense amplifiers (transistors TRsQ8 to Q13 and TRsQ20 to Q25) and resister TRsQ21 to Q26 are provided between each pair of them. The potential of one bit line is set to the reference level to perform differential sensing, and data are simultaneously read out from memory cells connected to the same word line 3, and it is sufficient if read data are transferred to an output buffer, and then, data is read out at a high speed. Read data are successively transferred to the output buffer to perform the serial access. Since the device is operated by 1.5V, the circuit constitution is simplified.