MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To shorten the period of manufacture by forming a wiring pattern, boring the window of a contact hole, sputtering inert gas ions, moving and burying wiring material atoms or molecules on a surface in the window and connecting the wiring pattern and the contact hole. CONSTITUTION:A semiconductor element is prepared on a semiconductor substrate 1, a top face including the connecting electrode section of the semiconductor element is coated with an insulating film 7, a wiring pattern 11 is formed on to the insulating film, 7 and the wiring pattern and the insulating film on the connecting electrode section are removed selectively through etching to bore a window 12 to the connecting electrode section. Inert gas ions are sputtered on the whole surface, the atoms or molecules of a wiring material are moved and buried into the window 12, and a connecting electrode connected to the wiring pattern 11 is formed. Accordingly, a semiconductor device can be acquired in a short time.