FILM FORMING METHOD AND APPARATUS

PURPOSE:To obtain a dense film having a high degree of crystal orientation by using gas molecules and/or radicals having a different reaction rate from a substrate depending on the orientation and applying an electric field in a predetermined direction. CONSTITUTION:Molecules of gas or radicals having different rate of reaction from substrate wafer according to the orientation are generated at a plasma generator 3 and initially are making translational motions in all directions. When DC voltages are applied to a first pair of electrodes 5a and 5b, a second pairs of electrodes 5c and 5d and third pair of electrode 5e and 5f, the spontaneously polarized molecules of gas or radicals will be oriented in the direction of electric field and the direction toward a substrate wafer 1 and accelerated. Moreover, an electric field having the same direction is formed between the electrode 5f and the substrate wafer 1. Thus, radicals or molecules of gas are able to reach the substrate wafer 1 with the orientation not disturbed even between the electrode 5f and the substrate wafer 1.