DRY ETCHING METHOD AND DEVICE

PURPOSE:To enhance anisotropy and/or etching rate without sacrifice of selectivity by applying an electric field in predetermined direction on gas molecules and/or radicals having reaction rate with base material depending on the orientation and arranging the orientation in the direction for increasing the reaction rate. CONSTITUTION:Gas molecules or radicals having reaction rate with respect to a substrate wafer 7 depending on the orientation are produced from a plasma generating section 1. The gas molecules or the radicals are moving at first in all directions. Upon application of a DC voltage on the electrodes 3a, 3b, 3c, 3d, 3e, 3f, spontaneously polarized gas molecules or radicals are oriented in the direction of the electric field, i.e., toward the substrate wafer 7, and then accelerated. Furthermore, since an electric field is also formed in same direction between the electrode 3f and the substrate wafer 7, orientation of the gas molecules or the radicals are not disturbed even between the electrode 3f and the substrate wafer 7 and the gas molecules or radicals arrive smoothly to the substrate wafer 7.