MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To remove the foreign matters to be pollutants by a method wherein the foreign matters are physically etched away by RIE process and then a flection preventive film comprising a semiconductor material is chemically etched away. CONSTITUTION:The insulating film 12 on a semiconductor substrate 11 is coated with an aluminum copper alloy film 13 by sputtering process and further with a reflection preventive film 14 which is coated with a resist film to form a resist film mask 15 by exposure.development steps using photoprocess. Next, the flection preventive film 14 and the aluminum copper alloy film 13 are patterned by RIE process using a chlorine gas as well as this resist film mask 15 as a protective mask. Next, after removing the resist film mask 15 by ashing step, the whole surface is vertically etched away by RIE process using Ar gas so as to be physically cleaning-up processed. Finally, the reactive film 4 comprising silicon is chemically etched away by isotropical etching process using fluorine base gas to form the aluminum copper alloy wiring 13 so that the foreign matters on a scribe line may be removed.