PRODUCTION OF SIC-COATED SIC CERAMIC PRODUCT
PURPOSE:To obtain the title ceramic product with reduced SiC film exfoliation and decreased pinhole production by forming a SiC film through vapor growth on a SiC base material treated under specified conditions in advance to enable SiC film formation in the theoretical density. CONSTITUTION:The pro...
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| creator | SUGAI TERUO SAKAI YUKIFUMI |
| description | PURPOSE:To obtain the title ceramic product with reduced SiC film exfoliation and decreased pinhole production by forming a SiC film through vapor growth on a SiC base material treated under specified conditions in advance to enable SiC film formation in the theoretical density. CONSTITUTION:The production of the objective ceramic product where a SiC film is formed on a SiC base material of desired shape by vapor growth method is carried out as follows: the ceramic base material is held, in advance, at 1500-2500 deg.C for >=40min in an atmosphere of reduced pressure and heat-treated to obtain the objective product. In this process, prior to SiC film formation, the gas contained in the base material is released. For the atmosphere of reduced pressure, 1Torr, longer time for the heat treatment will be required. If the heat treatment temperature is |
| format | Patent |
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CONSTITUTION:The production of the objective ceramic product where a SiC film is formed on a SiC base material of desired shape by vapor growth method is carried out as follows: the ceramic base material is held, in advance, at 1500-2500 deg.C for >=40min in an atmosphere of reduced pressure and heat-treated to obtain the objective product. In this process, prior to SiC film formation, the gas contained in the base material is released. For the atmosphere of reduced pressure, <=1Torr is preferable; in case of >1Torr, longer time for the heat treatment will be required. If the heat treatment temperature is <1500 deg.C, the release of the gas will be insufficient, leading to insufficient reduction in the amount of the gas to be released in the SiC film formation. On the contrary, when the heat treatment temperature exceeds 2500 deg.C, the SiC will be decomposed.</description><language>eng</language><subject>ARTIFICIAL STONE ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SLAG ; TREATMENT OF NATURAL STONE</subject><creationdate>1991</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19910409&DB=EPODOC&CC=JP&NR=H0383861A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19910409&DB=EPODOC&CC=JP&NR=H0383861A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUGAI TERUO</creatorcontrib><creatorcontrib>SAKAI YUKIFUMI</creatorcontrib><title>PRODUCTION OF SIC-COATED SIC CERAMIC PRODUCT</title><description>PURPOSE:To obtain the title ceramic product with reduced SiC film exfoliation and decreased pinhole production by forming a SiC film through vapor growth on a SiC base material treated under specified conditions in advance to enable SiC film formation in the theoretical density. CONSTITUTION:The production of the objective ceramic product where a SiC film is formed on a SiC base material of desired shape by vapor growth method is carried out as follows: the ceramic base material is held, in advance, at 1500-2500 deg.C for >=40min in an atmosphere of reduced pressure and heat-treated to obtain the objective product. In this process, prior to SiC film formation, the gas contained in the base material is released. For the atmosphere of reduced pressure, <=1Torr is preferable; in case of >1Torr, longer time for the heat treatment will be required. If the heat treatment temperature is <1500 deg.C, the release of the gas will be insufficient, leading to insufficient reduction in the amount of the gas to be released in the SiC film formation. On the contrary, when the heat treatment temperature exceeds 2500 deg.C, the SiC will be decomposed.</description><subject>ARTIFICIAL STONE</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1991</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAJCPJ3CXUO8fT3U_B3Uwj2dNZ19ncMcXUBMRWcXYMcfYE0VBEPA2taYk5xKi-U5mZQcHMNcfbQTS3Ij08tLkhMTs1LLYn3CvAwMLYwtjAzdDQmQgkARo0k2Q</recordid><startdate>19910409</startdate><enddate>19910409</enddate><creator>SUGAI TERUO</creator><creator>SAKAI YUKIFUMI</creator><scope>EVB</scope></search><sort><creationdate>19910409</creationdate><title>PRODUCTION OF SIC-COATED SIC CERAMIC PRODUCT</title><author>SUGAI TERUO ; SAKAI YUKIFUMI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0383861A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1991</creationdate><topic>ARTIFICIAL STONE</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>SUGAI TERUO</creatorcontrib><creatorcontrib>SAKAI YUKIFUMI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUGAI TERUO</au><au>SAKAI YUKIFUMI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION OF SIC-COATED SIC CERAMIC PRODUCT</title><date>1991-04-09</date><risdate>1991</risdate><abstract>PURPOSE:To obtain the title ceramic product with reduced SiC film exfoliation and decreased pinhole production by forming a SiC film through vapor growth on a SiC base material treated under specified conditions in advance to enable SiC film formation in the theoretical density. CONSTITUTION:The production of the objective ceramic product where a SiC film is formed on a SiC base material of desired shape by vapor growth method is carried out as follows: the ceramic base material is held, in advance, at 1500-2500 deg.C for >=40min in an atmosphere of reduced pressure and heat-treated to obtain the objective product. In this process, prior to SiC film formation, the gas contained in the base material is released. For the atmosphere of reduced pressure, <=1Torr is preferable; in case of >1Torr, longer time for the heat treatment will be required. If the heat treatment temperature is <1500 deg.C, the release of the gas will be insufficient, leading to insufficient reduction in the amount of the gas to be released in the SiC film formation. On the contrary, when the heat treatment temperature exceeds 2500 deg.C, the SiC will be decomposed.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE LIME, MAGNESIA METALLURGY REFRACTORIES SLAG TREATMENT OF NATURAL STONE |
| title | PRODUCTION OF SIC-COATED SIC CERAMIC PRODUCT |
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