PRODUCTION OF SIC-COATED SIC CERAMIC PRODUCT

PURPOSE:To obtain the title ceramic product with reduced SiC film exfoliation and decreased pinhole production by forming a SiC film through vapor growth on a SiC base material treated under specified conditions in advance to enable SiC film formation in the theoretical density. CONSTITUTION:The pro...

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Hauptverfasser:	SUGAI TERUO, SAKAI YUKIFUMI
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE LIME, MAGNESIA METALLURGY REFRACTORIES SLAG TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain the title ceramic product with reduced SiC film exfoliation and decreased pinhole production by forming a SiC film through vapor growth on a SiC base material treated under specified conditions in advance to enable SiC film formation in the theoretical density. CONSTITUTION:The production of the objective ceramic product where a SiC film is formed on a SiC base material of desired shape by vapor growth method is carried out as follows: the ceramic base material is held, in advance, at 1500-2500 deg.C for >=40min in an atmosphere of reduced pressure and heat-treated to obtain the objective product. In this process, prior to SiC film formation, the gas contained in the base material is released. For the atmosphere of reduced pressure, 1Torr, longer time for the heat treatment will be required. If the heat treatment temperature is